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Large height tree-like sub 30nm vias to reduce conductive material re-deposition for sub 60nm MRAM devices
Large height tree-like sub 30nm vias to reduce conductive material re-deposition for sub 60nm MRAM devices
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机译:大高度的树状30纳米以下通孔可减少60纳米以下MRAM器件的导电材料重新沉积
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摘要
A stack of connecting metal vias is formed on a bottom electrode by repeating steps of depositing a conductive via layer, patterning and trimming the conductive via layer to form a sub 30 nm conductive via, encapsulating the conductive via with a dielectric layer, and exposing a top surface of the conductive via. A MTJ stack is deposited on the encapsulated via stack. A top electrode layer is deposited on the MTJ stack and patterned and trimmed to form a sub 60 nm hard mask. The MTJ stack is etched using the hard mask to form an MTJ device and over etched into the encapsulation layers but not into the bottom electrode wherein metal re-deposition material is formed on sidewalls of the encapsulation layers underlying the MTJ device and not on sidewalls of a barrier layer of the MTJ device.
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