Electronic device includes resistive storage cells and reference resistance transistor, a resistance adjustment block to adjust the resistance value depending on a temperature and a data sensing block to sense the resistive value of the resistive storage cell and the reference transistor resistance value

摘要

An electronic device includes a semiconductor memory. The semiconductor memory includes one or more resistive storage cells each structured to exhibit different resistance values for storing data; at least one reference resistance transistor to produce a reference resistance value; a reference resistance adjustment block coupled to the at least one reference resistance transistor and structured to supply a signal to the at least one reference resistance transistor that can cause an adjustment in the resistance value of the reference resistance transistor; and a data sensing block coupled to the one or more resistive storage cells and the at least one reference resistance transistor, the data sensing block structured to sense resistance values of a resistive storage cell selected among the one or more resistive storage cells and the at least one reference resistance transistor and to compare the sensed resistance values to determine data of the selected resistive storage cell.