首页> 外国专利> TRIPHENYLGERMYLSILANE AND TRICHLOROSILYL-TRICHLOROGERMANE FOR THE PRODUCTION OF GERMANIUM-SILICON LAYERS, AND METHOD FOR THE PRODUCTION THEREOF FROM TRICHLOROSILYL-TRIPHENYLGERMANE

TRIPHENYLGERMYLSILANE AND TRICHLOROSILYL-TRICHLOROGERMANE FOR THE PRODUCTION OF GERMANIUM-SILICON LAYERS, AND METHOD FOR THE PRODUCTION THEREOF FROM TRICHLOROSILYL-TRIPHENYLGERMANE

机译:用于生产锗硅层的三苯甲基羟甲基戊烷和三氟硅烷基-三茂铁锗烷以及由三氟甲基硅烷基-三苯甲基锗烷生产的方法

摘要

Triphenylgermylsilane (Ph3Ge—SiH3) is useful for the production of germanium-silicon layers (Ge—Si) or as transfer agent of silane groups (SiH3). Further, a method describes the production of triphenylgermylsilane (Ph3Ge—SiH3) by reducing trichlorosilyltriphenylgermane (Ph3Ge—SiCl3) with a hydride in solution, and another method describes the production of trichlorosilyltrichlorogermane (C3Ge—SiCl3) by reacting trichlorosilyltriphenylgermane (Ph3Ge—SiCl3) with hydrogen chloride (HCl) in the presence of AlCl3 in solution. In addition, trichlorosilyltrichlorogermane is also used for the production of germanium-silicon layers (Ge—Si).
机译:三苯基锗烷基硅烷(Ph 3 Ge-SiH 3 )可用于生产锗硅层(Ge-Si)或用作硅烷基团的转移剂(SiH 3 )。此外,一种方法描述了通过还原三氯甲硅烷基三苯基锗烷(Ph 3 Ge-SiCl )来生产三苯基锗​​烷基硅烷(Ph 3 Ge-SiH 3 )的方法。 3 )与氢化物的溶液混合,另一种方法描述了通过使三氯甲硅烷基三苯基锗烷(Ph )反应来生产三氯甲硅烷基三氯锗烷(C 3 Ge-SiCl 3 ) AlCl 3 存在下,用氯化氢(HCl)还原3 Ge-SiCl 3 )。此外,三氯甲硅烷基三氯锗烷也用于生产锗硅层(Ge-Si)。

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