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MOS transistor-based RF switch topologies for high speed capacitive tuning of oscillators
MOS transistor-based RF switch topologies for high speed capacitive tuning of oscillators
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机译:基于MOS晶体管的RF开关拓扑结构,用于振荡器的高速电容调谐
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摘要
Various designs for MOS transistor-based RF switch topologies for high speed capacitive tuning of oscillators switch circuits include a main switch device comprising a gate connected to a control terminal, a drain connected to a first terminal that is connected to the first capacitor, and a source connected to a second terminal that is connected to the second capacitor. The switch further comprises a first NMOS device having a gate connected to the main switch device gate, a source connected to a ground, and a drain connected to the first terminal. The switch further comprises a second NMOS device having a gate connected to the main switch device gate, a source connected to a ground, and a drain connected to the second terminal. The switch further comprises a pair of PMOS devices each having drains connected respectively to the first and second terminals.
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