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Precessional spin current structure with high in-plane magnetization for MRAM
Precessional spin current structure with high in-plane magnetization for MRAM
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机译:用于MRAM的具有高面内磁化的进动自旋电流结构
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摘要
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a precessional spin current (PSC) magnetic layer in conjunction with a perpendicular MTJ where the in-plane magnetization direction of the PSC magnetic layer is free to rotate. The precessional spin current magnetic layer is constructed with a material having a face centered cubic crystal structure, such as permalloy.
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