Temperature and V_GS compensation for current sensing using R_dson in MOSFETS

摘要

A power MOSFET Rdson compensation device comprising analog circuitry receives an input signal proportional to a voltage drop across a power MOSFET, one or more base reference voltages, a voltage-dependent reference voltage, and a temperature-dependent reference voltage. The analog circuitry is configured to produce an output current corresponding to the input signal with compensation for voltage and temperature variation of a drain-source on resistance of the power MOSFET.