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Stress induction in 3D device channel using elastic relaxation of high stress material
Stress induction in 3D device channel using elastic relaxation of high stress material
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机译:利用高应力材料的弹性松弛在3D设备通道中产生应力
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摘要
A method for inducing stress in a device channel includes forming a stress adjustment layer on a substrate, the stress adjustment layer including an as deposited stress due to crystal lattice differences with the substrate. A device channel layer is formed on the stress adjustment layer. Cuts are etched through the device channel layer and the stress adjustment layer to release the stress adjustment layer to induce stress in the device channel layer. Source/drain regions are formed adjacent to the device channel layer.
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