Quantum metrology and quantum memory using defect sates with spin-3/2 or higher half-spin multiplets

摘要

Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a V_Si⁻ monovacancy defect in silicon carbide, as well as quantum memory devices and methods for creation of quantum memory using the spin states of a V_Si⁻ monovacancy defect in silicon carbide.