首页>
外国专利>
STEAM OXIDATION INITIATION FOR HIGH ASPECT RATIO CONFORMAL RADICAL OXIDATION
STEAM OXIDATION INITIATION FOR HIGH ASPECT RATIO CONFORMAL RADICAL OXIDATION
展开▼
机译:高纵横比共形自由基氧化的蒸汽氧化引发
展开▼
页面导航
摘要
著录项
相似文献
摘要
A substrate oxidation assembly includes: a chamber body defining a processing volume; a substrate support disposed in the processing volume; a plasma source coupled to the processing volume; a steam source fluidly coupled to the processing volume; and a substrate heater. A method of processing a semiconductor substrate includes: initiating conformal radical oxidation of high aspect ratio structures of the substrate comprising: heating the substrate; and exposing the substrate to steam; and conformally oxidizing the substrate. A semiconductor device includes a silicon and nitrogen containing layer; a feature formed in the silicon and nitrogen containing layer having an aspect ratio of at least 40:1; and an oxide layer on the face of the feature having a thickness in a bottom region of the silicon and nitrogen containing layer that is at least 95% of a thickness of the oxide layer in a top region.
展开▼