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METHOD TO INDUCE STRAIN IN 3-D MICROFABRICATED STRUCTURES
METHOD TO INDUCE STRAIN IN 3-D MICROFABRICATED STRUCTURES
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机译:在3D微细结构中产生应变的方法
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摘要
Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.
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