STAIRCASE STRUCTURE WITH MULTIPLE DIVISIONS FOR THREE-DIMENSIONAL MEMORY

摘要

Embodiments of staircase structures of a three-dimensional memory device and fabrication method thereof are disclosed. The semiconductor structure includes a first and a second film stacks, wherein the first film stack is disposed over the second film stack and has M₁ number of layers. The second film stack has M₂ number of layers. M₁ and M₂ are whole numbers. The semiconductor structure also includes a first and a second staircase structures, wherein the first staircase structure is formed in the first film stack and the second staircase structure is formed in the second film stack. The first and second staircase structures are next to each other with an offset.