首页> 外国专利> Real-time monitoring microscopic imaging system for nitride MOCVD epitaxial growth mode

Real-time monitoring microscopic imaging system for nitride MOCVD epitaxial growth mode

机译:氮化物MOCVD外延生长模式的实时监控显微成像系统

摘要

A real-time monitoring microscopic imaging system for nitride MOCVD (metal organic chemical vapor deposition) epitaxial growth mode includes an observation window, an imaging lens set, a CCD (charge coupled device) camera, an image capture card and an image storage and display device, wherein: the observation window is provided at a top portion of a graphite carrier in an MOCVD reaction chamber and is formed by a thicker quartz glass to prevent temperature in the reaction chamber from damaging the lenses. The microscopic imaging system has the resolution better than 1 μm, is able to distinguish the 2D growth mode and the 3D growth mode, observe whether the surface of the epitaxial wafer has screw dislocations in the MOCVD process, so as to observe the growth mode of the MOCVD epitaxial wafer in real time during the growth process.
机译:用于氮化物MOCVD(金属有机化学气相沉积)外延生长模式的实时监控显微成像系统,包括观察窗,成像透镜组,CCD(电荷耦合器件)相机,图像采集卡以及图像存储和显示装置,其中:观察窗设置在MOCVD反应室内的石墨载体的顶部,并由较厚的石英玻璃形成,以防止反应室内的温度损坏透镜。显微成像系统具有优于1μm的分辨率,能够区分2D生长模式和3D生长模式,观察外延晶片的表面在MOCVD工艺中是否存在螺旋位错,从而观察到的生长模式。在生长过程中实时MOCVD外延晶片。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号