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Integrated Assemblies Having Capacitive Units, and Having Resistive Structures Coupled with the Capacitive Units

机译:具有电容单元并具有与电容单元耦合的电阻结构的集成组件

摘要

Some embodiments include an integrated assembly having a capacitive unit which includes a plurality of capacitive subunits. A first conductive structure is under a first group of the capacitive subunits and is coupled with them. A second conductive structure is under a second group of the capacitive subunits and is coupled with them. A third conductive structure is over the capacitive subunits and is coupled with all of the capacitive subunits. A resistive structure extends under the first and second conductive structures. The resistive structure has a first-end-region under the first conductive structure and coupled with the first conductive structure. The resistive structure includes resistive lines extending from the first-end-region to second-end-regions.
机译:一些实施例包括具有电容单元的集成组件,该电容单元包括多个电容子单元。第一导电结构在第一组电容性子单元下方并且与它们耦合。第二导电结构在第二组电容性子单元下方并且与它们耦合。第三导电结构在电容性子单元上方并且与所有电容性子单元耦合。电阻结构在第一和第二导电结构下方延伸。电阻结构具有在第一导电结构下方并且与第一导电结构耦合的第一末端区域。电阻结构包括从第一端部区域延伸到第二端部区域的电阻线。

著录项

  • 公开/公告号US2020243501A1

    专利类型

  • 公开/公告日2020-07-30

    原文格式PDF

  • 申请/专利权人 MICRON TECHNOLOGY INC.;

    申请/专利号US201916262087

  • 申请日2019-01-30

  • 分类号H01L27/01;H01L23/522;

  • 国家 US

  • 入库时间 2022-08-21 11:21:41

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