首页> 外国专利> NVRAM SYSTEM MEMORY WITH MEMORY SIDE CACHE THAT FAVORS WRITTEN TO ITEMS AND/OR INCLUDES REGIONS WITH CUSTOMIZED TEMPERATURE INDUCED SPEED SETTINGS

NVRAM SYSTEM MEMORY WITH MEMORY SIDE CACHE THAT FAVORS WRITTEN TO ITEMS AND/OR INCLUDES REGIONS WITH CUSTOMIZED TEMPERATURE INDUCED SPEED SETTINGS

机译:NVRAM系统内存带有存储侧面,可以方便地写入项目和/或包括具有自定义温度诱导速度设置的区域

摘要

An apparatus is described. The apparatus includes a memory controller to interface with a memory side cache and an NVRAM system memory. The memory controller has logic circuitry to favor items cached in the memory side cache that are expected to be written to above items cached in the memory side cache that are expected to only be read from.
机译:描述了一种设备。该设备包括与存储器侧高速缓存和NVRAM系统存储器接口的存储器控​​制器。存储器控制器具有逻辑电路,以支持期望被写入到存储器侧高速缓存中的项目和期望仅从存储器侧高速缓存中被读取的项目。

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