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STRUCTURE AND METHOD FOR FORMING FULLY-ALIGNED TRENCH WITH AN UP-VIA INTEGRATION SCHEME
STRUCTURE AND METHOD FOR FORMING FULLY-ALIGNED TRENCH WITH AN UP-VIA INTEGRATION SCHEME
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机译:带有上整合方案的全对齐沟槽的结构和方法
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摘要
A method for manufacturing a semiconductor device includes forming a conductive via extending vertically from a conductive layer, and depositing a first dielectric layer on the conductive layer and on lateral sides the conductive via. In the method, the conductive via is recessed with respect to a top surface of the first dielectric layer. An etch stop layer is deposited on the top surface of the first dielectric layer and on a top surface of the conductive via, and a second dielectric layer is deposited on the etch stop layer. The method also includes removing portions of the etch stop layer and the second dielectric layer to create a plurality of trenches spaced apart from each other. A trench of the plurality of trenches is formed over and exposes at least part of the conductive via, and a conductive material is deposited in the plurality of trenches.
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