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FIELD MANAGED GROUP III-V FIELD EFFECT DEVICE WITH EPITAXIAL BACK-SIDE FIELD PLATE
FIELD MANAGED GROUP III-V FIELD EFFECT DEVICE WITH EPITAXIAL BACK-SIDE FIELD PLATE
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机译:具有外延背场板的场控III-V族场效应器件
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摘要
A semiconductor device having a back-side field plate includes a buffer layer that includes a first compound semiconductor material, where the buffer layer is epitaxial to a crystalline substrate. The semiconductor device also includes field plate layer that is disposed on a surface of the buffer layer. The semiconductor device further includes a first channel layer disposed over the field plate layer, where the first channel layer includes the first compound semiconductor material. The semiconductor device further includes a region comprising a two-dimensional electron gas, where the two-dimensional electron gas is formed at an interface between the first channel layer and a second channel layer. The semiconductor device additionally includes a back-side field plate that is formed by a region of the field plate layer and is electrically isolated from other regions of the field plate layer.
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