The procedure for the synthesis of quasi-one-dimensional structures of 4d and 5d (Nb, Mo Ta, W)of transition metal

摘要

The subject of the invention is a process for the synthesis of one-dimensional structures, i.e. nanowires, microwires and nanowires of 4d and 5d transition metals (Nb, Mo Ta, W). The invention belongs to the field of inorganic chemistry and chemistry of transition metals. The invention relates to the synthesis of quasi-one-dimensional structures of transition metals by the method of conversion of quasi-one-dimensional compounds by submicron cross-section of nanowires described by the formula M6CyHz, (8.2 less than y + with less than or equal to 0), where M is a transition metal Mo Ta, W), C is chalcogen (sulfur (S), selenium (Se), tellurium (Te)); H is halogen (iodine (I)) by heating in the presence of hydrogen. This process allows the synthesis of quasi-one-dimensional structures, i.e. nanowires, microwires, and nanotraps of 4d and 5d transition metals (Nb, Mo Ta, W).