首页> 外国专利> TOTAL REFLECTION X-RAY FLUORESCENCE ANALYSIS DEVICE AND MEASURING METHOD

TOTAL REFLECTION X-RAY FLUORESCENCE ANALYSIS DEVICE AND MEASURING METHOD

机译:全反射X射线荧光分析装置及测定方法

摘要

The present invention enables realizing, at low costs and in a simplified manner: a method for measuring the density and the thickness of a measurement sample; and a total reflection X-ray fluorescence analysis device for measuring the density and the thickness of a measurement sample. This total reflection X-ray fluorescence analysis device comprises: an X-ray source which emits a monochromatic primary X-ray while changing the incident angle with respect to the surface of a measurement sample in a range covering the total reflection critical angle of the measurement sample; a detector for measuring the intensity of a resultant fluorescent X-ray generated from the measurement sample; and a computation unit that acquires a differential curve by differentiating, with respect to the incident angle, the relation between the fluorescent X-ray intensity and the incident angle, that acquires the total reflection critical angle from the differential curve, and that, on the basis of the total reflection critical angle and the wavelength of the primary X-ray, computes the density and/or the thickness of the measurement sample.
机译:本发明能够以低成本且简化的方式实现:一种用于测量测量样本的密度和厚度的方法;全反射X射线荧光分析装置,用于测定测定样品的密度和厚度。该全反射X射线荧光分析装置包括:X射线源,该X射线源在覆盖测量的全反射临界角的范围内,在改变相对于测量样品的表面的入射角的同时,发出单色的一次X射线。样品;检测器,用于测量从测量样本产生的合成荧光X射线的强度;计算单元,其通过相对于入射角微分荧光X射线强度和入射角之间的关系来获得微分曲线,从微分曲线中获得全反射临界角,并且根据全反射临界角和一次X射线的波长,计算测量样品的密度和/或厚度。

著录项

  • 公开/公告号WO2020003675A1

    专利类型

  • 公开/公告日2020-01-02

    原文格式PDF

  • 申请/专利权人 RIGAKU CORPORATION;

    申请/专利号WO2019JP14524

  • 发明设计人 KONO HIROSHI;MURAKAMI SATOSHI;

    申请日2019-04-01

  • 分类号G01N23/223;G01B15/02;G01N23/20;

  • 国家 WO

  • 入库时间 2022-08-21 11:14:03

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