ULTRAVIOLET WAVEBAND METAL-DOPED GALLIUM OXIDE TRANSPARENT CONDUCTIVE THIN FILM AND PREPARATION METHOD THEREFOR

摘要

A preparation method for an ultraviolet waveband metal-doped gallium oxide transparent conductive thin film, comprising: growing a contact layer thin film (2) on a substrate (1), and annealing the grown contact layer thin film (2) in a nitrogen-oxygen atmosphere at 400°C-600°C by means of a rapid thermal annealing furnace; sputter growing a first Ga₂O₃ thin film (31) by means of magnetron sputtering under argon conditions; sputter growing a doping thin film (4) by means of magnetron sputtering under argon conditions; sputter growing a second Ga₂O₃ thin film (32) by means of magnetron sputtering under argon conditions; annealing the grown thin films in a nitrogen-oxygen atmosphere at 500°C-600°C by means of a rapid thermal annealing furnace, so that permeation, diffusion and fusion occurs between the thin film materials, to form a metal-doped Ga₂O₃ thin film (5). Also disclosed is an ultraviolet waveband metal-doped gallium oxide transparent conductive thin film.