首页> 外国专利> ARRANGEMENT UND METHOD FOR THE GRADUAL SHUTOFF OF POTENTIAL IN HIGH VOLTAGE TECHNOLOGY

ARRANGEMENT UND METHOD FOR THE GRADUAL SHUTOFF OF POTENTIAL IN HIGH VOLTAGE TECHNOLOGY

机译:高压技术中电位的水平截止的安排和方法

摘要

The invention relates to an arrangement (27) and to a method for the gradual shutoff of potential in high voltage technology, comprising at least one armature body (28), electrically insulating film (29), and electrically conductive regions (4), wherein the electrically conductive regions (4) are arranged between layers of the electrically insulating films (29), and at least parts of the electrically insulating film (29) are arranged around the at least one armature body (28). The arrangement (27) is designed for direct current applications, wherein resistive compensation currents are reduced and/or avoided along the electrically insulating film (29) by configuration for higher voltage levels, and/or by an armature body (28), which functions as a first gradual potential shutoff coating, and/or by means of the electrical contacting of the outermost electrically conductive region (4) between layers of electrically insulating film (29) via an electrical contact (30) through an opening (31) in the outer layer of the insulating film (29).
机译:本发明涉及一种用于在高压技术中逐渐切断电势的装置(27)和一种方法,其包括至少一个电枢体(28),电绝缘膜(29)和导电区域(4),其中导电区域(4)布置在电绝缘膜(29)的层之间,并且电绝缘膜(29)的至少一部分布置在至少一个电枢体(28)周围。装置(27)被设计用于直流应用,其中通过较高电压水平的构造和/或通过电枢体(28)来减少和/或避免沿着电绝缘膜(29)的电阻补偿电流。作为第一逐步电势隔离涂层,和/或借助于最绝缘层(29)之间的最外面的导电区域(4)通过电触点(30)穿过开口中的开口(31)进行电接触绝缘膜(29)的外层。

著录项

  • 公开/公告号WO2020048720A1

    专利类型

  • 公开/公告日2020-03-12

    原文格式PDF

  • 申请/专利权人 SIEMENS AKTIENGESELLSCHAFT;

    申请/专利号WO2019EP71291

  • 发明设计人 MÜLLER SEBASTIAN;PRUCKER UDO;

    申请日2019-08-08

  • 分类号H01F38/30;H01B17/28;

  • 国家 WO

  • 入库时间 2022-08-21 11:12:54

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