INTERNAL MATCHING TYPE HIGH POWER AMPLIFIER

摘要

The present invention relates to an internal matching type high power amplifier, comprising: a heat sink in which a transistor and a plurality of matching circuits connected by wire bonding to form a package are bonded in parallel; an upper substrate disposed on the top of the heat sink, having a bias circuit and a plurality of capacitors mounted thereon, and an embedded section, in which the transistor and the plurality of matching circuits are buried, disposed on the bottom; an RF input stage and an RF output stage which are patterned to be connected to the bias circuit; and a lid which is disposed on the inner surface of the embedded section and protects the transistor and the plurality of matching circuits.