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NANO METAL OXIDE, PREPARATION METHOD THEREFOR, AND QUANTUM DOT LIGHT-EMITTING DIODE

机译:纳米金属氧化物,其制备方法和量子点发光二极管

摘要

Disclosed are a nano metal oxide, a preparation method therefor, and a quantum dot light-emitting diode, wherein the preparation method for the nano metal oxide comprises the steps of providing a composite material, which comprises a PAMAM dendrimer and a metal ion bonded within the cavity of the PAMAM dendrimer; and mixing the composite material and an initial nano metal oxide in a polar solvent, such that the metal ion in the composite material is ionized and then coordinated and bonded with an oxygen vacancy on the surface of the initial nano metal oxide so as to obtain the nano metal oxide. By the method, a nano metal oxide with fewer surface defects can be obtained. The use of the nano metal oxide as an electron transport layer material of a quantum dot light-emitting diode can adjust the electronic mobility of the quantum dot light-emitting diode, such that the electron-hole injection rate thereof achieves a balance, and the luminous efficiency thereof is thus improved.
机译:公开了一种纳米金属氧化物,其制备方法和量子点发光二极管,其中所述纳米金属氧化物的制备方法包括提供复合材料的步骤,所述复合材料包括PAMAM树枝状大分子和结合在其中的金属离子。 PAMAM树枝状聚合物的腔;将所述复合材料与初始纳米金属氧化物在极性溶剂中混合,使所述复合材料中的金属离子离子化,然后与所述初始纳米金属氧化物表面上的氧空位配位键合,得到纳米金属氧化物。通过该方法,可以获得具有较少表面缺陷的纳米金属氧化物。通过将纳米金属氧化物用作量子点发光二极管的电子传输层材料,可以调节量子点发光二极管的电子迁移率,使得其电子空穴注入率达到平衡,并且因此,提高了发光效率。

著录项

  • 公开/公告号WO2020108069A1

    专利类型

  • 公开/公告日2020-06-04

    原文格式PDF

  • 申请/专利权人 TCL TECHNOLOGY GROUP CORPORATION;

    申请/专利号WO2019CN108329

  • 发明设计人 CHENG LULING;YANG YIXING;

    申请日2019-09-27

  • 分类号H01L51/50;H01L51/54;B82Y30;

  • 国家 WO

  • 入库时间 2022-08-21 11:11:00

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