PROCESS AND METHOD FOR ACHIEVING HIGH IMMUNITY TO ULTRAFAST HIGH VOLTAGE TRANSIENTS ACROSS INORGANIC GALVANIC ISOLATION BARRIERS

摘要

A microelectronic device (100) contains a high voltage component (104) having an upper plate (132) and a lower plate (130). The upper plate is isolated from the lower plate by a main dielectric (136) between the upper plate and low voltage elements (106) at a surface of the substrate (102) of the microelectronic device. A lower-bandgap dielectric layer (140) is disposed between the upper plate and the main dielectric. The lower-bandgap dielectric layer contains at least one sub-layer (144) of silicon nitride having a refractive index between 2.11 and 2.23. The lower-bandgap dielectric layer extends beyond the upper plate continuously around the upper plate. The lower-bandgap dielectric layer has an isolation break (150) surrounding the upper plate at a distance of at least twice the thickness of the lower-bandgap dielectric layer from the upper plate.