Multi-zone diffusion barriers containing titanium, silicon and nitrogen

摘要

The disclosed techniques generally relate to semiconductor structures and their manufacture, and more particularly to diffusion barrier structures containing Ti, Si, N and methods of forming them. A method of forming an electrically conductive diffusion barrier comprises providing a substrate in a reaction chamber and forming a titanium silicide (TiSi) region on the substrate by alternately exposing the substrate to a titanium-containing precursor and a first silicon-containing precursor. Steps. The method further includes forming a titanium silicon nitride (TiSiN) region on the TiSi region by alternately exposing the substrate to a titanium-containing precursor, a nitrogen-containing precursor and a second silicon-containing precursor. The method may optionally include forming a titanium nitride (TiN) region by alternating exposing the substrate to a titanium-containing precursor and a nitrogen-containing precursor prior to forming the TiSi region.