PMMA METHOD FOR FABRICATING FIELD EFFECT TRANSISTOR AND METHD FOR REMOVING POLY METHYL METHACRYLATE FROM GRAPHENE DEVICE

摘要

A method of manufacturing a field effect transistor according to an embodiment of the present invention includes forming a source electrode and a drain electrode on a substrate; Forming a stacked structure by combining at least a part of PMMA on graphene; Stacking the structure to cover the source electrode and the drain electrode on a semiconductor substrate on which the source electrode and the drain electrode are formed; And removing PMMA from the structure by irradiating an electron beam onto the top surface of the structure and then developing it.