Magnetic Skyrmion Device based on Dzyaloshinskii-Moriya Interaction Control

摘要

The skirmion device according to an exemplary embodiment of the present invention includes a magnetic pattern including a metal layer and a magnetic layer that have an asymmetric exchange interaction, an in-plane current flows, extend in a first direction, and are sequentially stacked; A control electrode disposed to cover a portion of the magnetic pattern and including at least one opening; At least one write magnetic tunnel junction structure that is spaced apart from the control electrode and disposed on the magnetic pattern to generate skirmions in the magnetic pattern; At least one detection magnetic tunnel disposed in the opening of the control electrode, detecting a phase state of the skirmion or the skirmion, and arranged in a second direction perpendicular to the first direction within the arrangement plane of the magnetic pattern Junction structure; And an insulating layer disposed between the control electrode and the magnetic pattern. The skirmion proceeds along the first direction of the magnetic pattern by the in-plane current, and the applied voltage of the control electrode locally changes the asymmetric exchange interaction of the magnetic pattern to be within the arrangement plane of the magnetic pattern. The skirmion is moved to have a displacement in a second direction perpendicular to the first direction at.