SKYRMION MEMORY

摘要

According to the present invention, provided is a skyrmion memory, which comprises: a first line receiving an asymmetrically pulsed in-plane current; a second line in contact with the first line on the first line, generating the skyrmion therein through the asymmetrically pulsed in-plane current, and guiding the movement of the skyrmion; and an electrode node spaced apart from the first line below the second line and in contact with the second line, and maintaining a potential difference with the first line through the second line to control the movement of the skyrmion in the second line.