STORAGE PROGRAMMING TECHNIQUES

摘要

A memory device programmed to store a single bit or multiple bits may make a determination of a number of threshold voltages in one or more threshold voltage level regions. On the basis that the number of threshold voltages reaches and exceeds a threshold level, a page of bits can be read, and if the bit error rate of the page of bits is below a threshold rate, the page of bits can be read along with other bits that are in the cells are stored, and a provided additional page of bits are stored in the cells. However, if the bit error rate of the page of bits is at or above the threshold rate, the bit or bits stored in the cells can be error corrected and stored along with an additional page of bits provided.