首页> 外国专利> DENSIFICATION BY GAS PHASE CHEMICAL INFILTRATION OF POROUS ANNULAR SUBSTRATES

DENSIFICATION BY GAS PHASE CHEMICAL INFILTRATION OF POROUS ANNULAR SUBSTRATES

机译:气态化学渗透对多孔环状基质的致密化作用

摘要

The invention relates to a densification method by chemical gas infiltration of porous annular substrates (18), the method comprising at least the following steps: providing a plurality of unit modules (10) comprising a support plate (14) on which is formed a stack of substrates, the support plate comprising a central gas inlet opening (14a) communicating with an internal volume (17) formed by the central passages (18a) of the stacked substrates and the gas discharge openings (14b ) distributed angularly around the central opening, and a cylinder (16) forming a thermal mass arranged around the stack of substrate having a first end (16a) secured to the support plate and a second end (16b) free, forming stacks of unit modules in the enclosure (34) of a densification oven, and injecting into the stacks of unit modules a gaseous phase comprising a gaseous precursor of a mat matrix riau depositing within the pores of the substrates.
机译:本发明涉及一种通过化学气体渗透多孔环形基底(18)的致密化方法,该方法至少包括以下步骤:提供多个单元模块(10),该单元模块包括支撑板(14),在其上形成堆叠体在该基板中,支撑板包括与由堆叠的基板的中央通道(18a)形成的内部容积(17)连通的中央进气口(14a),以及围绕该中央开口成角度分布的排气口(14b),形成热质量的圆柱体(16)围绕衬底的堆叠布置,该衬底具有固定到支撑板上的第一端(16a)和自由的第二端(16b),从而在单元的外壳(34)中形成单元模块的堆叠。致密化炉,并向单元模块的堆叠中注入气相,该气相包括沉积在基材孔中的垫状基质的气态前体。

著录项

  • 公开/公告号FR3084672A1

    专利类型

  • 公开/公告日2020-02-07

    原文格式PDF

  • 申请/专利权人 SAFRAN CERAMICS;

    申请/专利号FR1857284

  • 发明设计人 FRANCK LAMOUROUX;REMY DUPONT;WILLIAM ROS;

    申请日2018-08-03

  • 分类号C23C16/44;C04B35/83;C23C16/455;C23C16/458;

  • 国家 FR

  • 入库时间 2022-08-21 11:00:32

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