CONSTRAINING A TRANSISTOR CHANNEL STRUCTURE WITH SUPERIMPOSED BARS THROUGH SPACER CONSTRAINING

摘要

Production of a transistor with a constrained channel structure comprising: a) providing a stack comprising an alternation of first bars of second semiconductor bars, b) producing a dummy gate, c) forming insulating spacers (23a, 23b), d) make blocks (47a, 47b) of stressing on both sides and against the insulating spacers so as to exert a tension or compression stress on the insulating spacers (23a, 23b), then, e) remove the dummy grid so as to release an opening between the insulating spacers (23a, 23b), f) forming in said opening a replacement grid.