PROCESS FOR MAKING A TRANSISTOR WHOSE ACTIVE ZONE CONTAINS A SEMI-METALLIC MATERIAL

摘要

Method for producing a transistor (100), comprising: -production, on a substrate (102, 104), of a gate (114) surrounded by a dielectric material (116); -deposition of a barrier layer (118) on the gate and the dielectric material; -etching of the barrier layer in accordance with an active area pattern, forming a channel location localized on the gate; -etching of the dielectric material located in the active area pattern, forming source and drain locations; -deposition of a semi-metallic material (128) in the channel, source and drain locations; -planarization of the semi-metallic material; -crystallization of the semi-metallic material, forming the channel (132) and the source and drain (130); and wherein the semimetallic material of the channel is semiconductor and the semimetallic material of the source and drain is electrically conductive. Figure for the abstract: Figure 11.