The present application relates to the technical field of display, and discloses a quantum dot light-emitting device and a manufacture method therefor. The quantum dot light-emitting device comprises a first electrode layer (2), a quantum dot light-emitting layer (5), an electron transport layer (6), a second electrode layer (7) and a third electrode layer (8) stacked in sequence. The side of the third electrode layer (8) departing from the first electrode layer (2) is configured as a light exit side; the second electrode layer (7) and the third electrode layer (8) are transparent electrode layers; and the work function of the second electrode layer (7) is greater than the LUMO energy level of the electron transport layer (6) and less than the work function of the third electrode layer (8). According to the quantum dot light-emitting device, the electrode at the light exit side is manufactured into a transparent electrode having a double-layer structure, thereby facilitating electron injection, improving the transmittance of the top electrode, and further improving the light extraction efficiency.
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