Resist materials comprising highly fluorinated polymers having a solubility in highly fluorinated solvents

摘要

The present invention relates to a resist material comprising a high fluorinated polymer having a solubility in a high fluorine-based solvent, and according to the present invention, a high fluorinated polymer having a solubility in a high fluorine-based solvent (PFDMA, PFUDMA, PFDDMA) is used as an electron beam resist material It can be applied in the form of a solution to the substrate, and the formed thin film has a reduced solubility due to electron beam irradiation, so that a high-resolution image can be formed, and when applied to electron beam lithography, a negative tone pattern is formed to be used as a negative resist material. Can be.