High speed low power spin orbit torque (SOT) assisted spin transfer torque magnetic random access memory (STT-MRAM) bit cell array

摘要

A magnetic random access memory (MRAM) array including several bit cells is described. Each of the bit cells may include a perpendicular magnetic tunnel junction (pMTJ) that includes a reference layer, a barrier layer that supports the reference layer, and a free layer that supports the barrier layer. A spin hole conductive material layer may support the free layer. The driver may be operable to set the state of at least one of the bit cells using an enhanced spin transfer torque (STT) current from the spin hole conductive material layer and the spin Hall effect. The increased STT current can be driven through the spin hole conductive material layer and the pMTJ such that a spin current is generated from the reference layer and the spin hole conductive material layer.