Treatment approach to improve film roughness by enhancing nucleation \/ adhesion of silicon oxide

摘要

One embodiment provides a method of forming an amorphous silicon layer on a substrate in a processing chamber.The method includes depositing a sacrificial dielectric layer of a predetermined thickness over the substrate.The method further comprises forming a patterned feature on the substrate by partially removing the sacrificial dielectric layer and exposing the upper surface of the substrate.The method further includes performing the plasma processing on the patterned feature.The method further includes depositing an amorphous silicon layer on the patterned features and on the exposed upper surface of the substrate.The method uses an anisotropic etching process to remove the amorphous silicon layer from the upper surface of the substrate and the upper surface of the substrate using an anisotropic etching process to ensure that the sidewall spacers formed from the amorphous silicon layer are filled with patterned features It further includes selectively removing the silicon layer.Diagram