首页> 外国专利> POLARIZATION-INSENSITIVE ACTIVE FREQUENCY SELECTIVE SURFACE

POLARIZATION-INSENSITIVE ACTIVE FREQUENCY SELECTIVE SURFACE

机译:极化无关主动频率选择性表面

摘要

The present invention includes a dielectric substrate having a square structure in which a metal pattern is mounted on an upper/lower layer in an active frequency selective surface, wherein varactor diodes are mounted in a cross-array on the upper layer of the dielectric substrate. In the lower layer of the dielectric substrate, two patches are symmetrically connected through a pin diode. Accordingly, the AFSS provided by the present invention is advantageous in that it is possible to switch between transmission mode and absorption mode and frequency tuning for the operation modes without being sensitive to polarization. have. In particular, the AFSS of the present invention is implemented by using a pin diode (pin diode) and a varactor diode (varactor diode), short response times (short response times), wide tuning ranges (wide tuning ranges), compact size ( compact size), and ease of use (ease of use).
机译:本发明包括具有正方形结构的电介质基板,其中,在有源频率选择表面中的上/下层上安装有金属图案,其中,变容二极管以交叉阵列的形式安装在电介质基板的上层上。在介电基板的下层中,两个贴片通过pin二极管对称地连接。因此,本发明提供的AFSS的优点在于,可以在传输模式和吸收模式之间切换,并且可以对操作模式进行频率调谐而对极化不敏感。有。特别地,本发明的AFSS通过使用pin二极管(pin二极管)和变容二极管(变容二极管),短的响应时间(短的响应时间),宽的调谐范围(宽的调谐范围),紧凑的尺寸(紧凑的尺寸),并且易于使用(易于使用)。

著录项

  • 公开/公告号KR1021297870000B1

    专利类型

  • 公开/公告日2020-07-03

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR1020190087460

  • 发明设计人 임성준;폰 라타나;

    申请日2019-07-19

  • 分类号

  • 国家 KR

  • 入库时间 2022-08-21 10:57:28

相似文献

  • 专利
  • 外文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号