首页> 外国专利> CAPTEUR MAGNETIQUE EN PONT AVEC STRUCTURE DE RÉSISTANCE FACTICE

CAPTEUR MAGNETIQUE EN PONT AVEC STRUCTURE DE RÉSISTANCE FACTICE

摘要

A bridge sensor (100) comprising at least one dummy resistor structure (110), at least one magnetic sensor structure (120), a first and a second regulator (130, 140), the dummy resistor structure and the sensor structure being bridge structures. The first regulator (130) is adapted to apply a predefined bias voltage between bias contacts of the at least one dummy resistor structure (110) and a related current at one of bias contacts of the at least one sensor structure (120). The second regulator (140) is adapted to regulate a dummy common mode voltage of the at least one dummy resistor structure (110) such that the dummy common mode voltage of the at least one dummy resistor structure (110) is the same as the common mode voltage of the at least one sensor structure (120).

著录项

  • 公开/公告号EP3686619A1

    专利类型

  • 公开/公告日2020.07.29

    原文格式PDF

  • 申请/专利权人

    申请/专利号EP19154065.7

  • 发明设计人

    申请日2019.01.28

  • 分类号

  • 国家 EP

  • 入库时间 2022-08-21 10:56:50

相似文献

  • 专利
  • 外文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号