RESISTIVE SPEICHERZELLE AUF OXRAMOXID-BASIS UND ENTSPRECHENDES HERSTELLUNGSVERFAHREN

摘要

One aspect of the present invention relates to a resistance storage unit based on nitrogen oxide, which comprises:-First electrode ("be");-A layer of m1oss', quartz lower oxide of the first metal M1;-The m2N layer of the second M2 metal nitride;-The m3m4o layer of the quaternary alloy of the third metal m3 ', the fourth metal M4', the fourth metal oxygen o or the third metal m3 ', the fourth metal M4', the fourth metal M4 ', the fourth metal M4', the fourth metal M4 ', d' nitrogen and o 'oxygen Quaternary alloy;-Second electrode ("t");The first, second, third and fourth metals M1, M2, m3 and M4 are the standard free entropy m3m4o