CELLULE DE CIRCUIT POUR DISPOSITIF DE MÉMOIRE OU DISPOSITIF LOGIQUE

摘要

According to an aspect there is provided a circuit cell for a memory device or a logic device, comprising:a first and a second logic gate having a respective output node, wherein each output node is configured to hold either one of a complementary high and low logic level voltages;a select line;a first and a second memory unit, each comprising a first terminal and a second terminal, and a resistive memory element and a bipolar selector connected in series between the first and second terminals, wherein the first terminals of the first and the second memory unit are connected to the output node of the first and second logic gate, respectively, and wherein the second terminals of the first and the second memory unit are connected to the select line;wherein each resistive memory element is configured to be switchable between a first and a second resistance state and in response to a switching current and each bipolar selector is configured to be conducting in response to an absolute value of a voltage difference across the bipolar selector exceeding a threshold of the bipolar selector and non-conducting in response to the absolute value being lower than said threshold.