The invention relates to a method for manufacturing an image sensor, which comprises the following steps:A structure is fabricated including a semiconductor layer () and a capacitive insulating wall () 105 s', which extends vertically from the front to the back of the semiconductor layer and includes a first (() 105a) and a second () 105b insulating wall separated by a conductive material or a conductive material. a. Semiconductor;(b) A portion of the thickness of the semiconductor layer is selectively etched from the back of the insulating wall（c. Deposition of a passivation medium layer (107) on the back of the structure; and(d) Local removal of passivation layer on insulation wall（
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