DISPOSITIF DE COMMUTATION RENFORCÉ ET SON PROCÉDÉ DE FABRICATION

摘要

The present invention discloses an enhancement-mode device and a method for manufacturing the same, which solve the problems of complicated manufacturing process and low stability and reliability of the traditional enhancement-mode devices. The enhancement-mode device includes: a substrate (1); a channel layer (23) and a barrier layer (24) successively formed on the substrate (1); an n-type semiconductor layer (3) formed on the barrier layer (24), a gate region being defined on a surface of the n-type semiconductor layer (3); a groove (4) that is formed in the gate region and at least partially runs through the n-type semiconductor layer (3); and a p-type conductor material (5) that is formed on the surface of the n-type semiconductor layer (3) and at least fills the inside of the groove (4).