HERSTELLUNGSVERFAHREN EINER LICHTQUELLE, UND LICHTQUELLE

摘要

The subject of the invention is a method of producing a light source comprising an active GeSn area interposed between two contact areas. The active zone is formed directly on a silicon oxide layer by a first lateral epitaxial growth of a germination layer in Ge followed by a second lateral epitaxial growth of a base layer in GeSn. Advantageously, a cavity is formed between the contact zones by encapsulation and etching, so as to guide these lateral growths. A vertical growth of GeSn is then carried out from the base layer to form a structural layer. The active zone is advantageously formed in the stack of base and structural layers. The method makes it possible to obtain a lateral injection light source comprising an active GeSn zone having a reduced rate of structural defects.