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PRÉLÈVEMENT ET PLACEMENT DE MICRO-DEL UTILISANT DU GALLIUM MÉTALLIQUE

摘要

An LED die containing a gallium semiconductor layer is placed on a target substrate using a pick-up tool (PUT) attached to the LED die using metallic gallium. As a result of a laser lift-of (LLO) process to separate the gallium semiconductor layer from a substrate layer on which the gallium semiconductor layer is formed, a layer of gallium metal is formed on a surface of the LED die. The gallium layer is melted to form liquid gallium. A head of the PUT is contacted with the liquid gallium, whereupon the LED die is cooled such that the liquid gallium solidifies, attaching the LED die to the PUT. The PUT picks up and places the LED die at a desired location on a target substrate. The LED die can be heated to melt the gallium layer, allowing the PUT to be detached.

著录项

  • 公开/公告号EP3467884B1

    专利类型

  • 公开/公告日2020.07.15

    原文格式PDF

  • 申请/专利权人

    申请/专利号EP18198768.6

  • 发明设计人

    申请日2018.10.05

  • 分类号

  • 国家 EP

  • 入库时间 2022-08-21 10:52:51

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