TRANSISTOR MIT QUELLENBLÖCKEN UND SILICIDEN-DRAINS IN DER NÄHE DES KANALS

摘要

Realization of a transistor comprising: - provide on a substrate provided with a surface semiconductor layer (4) in which an active area (4a) is capable of being formed: a grid block (9) arranged on this active area, - forming lateral protection zones (15c) against lateral faces of said grid block (9), - forming source and drain regions (19a, 19b) based on a compound of metallic material and of semiconductor material on either side of the grid and in the extension of a portion located opposite the block of grid, then, - forming insulating spacers (23c) on either side of the grid and resting on said regions based on a compound of metallic material and of semiconductor material (FIG. 1G).