首页> 美国政府科技报告 >CIS-Type PV Device Fabrication by Novel Techniques: Phase II Annual Technical Report, 1 July 1999-30 June 2000.
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CIS-Type PV Device Fabrication by Novel Techniques: Phase II Annual Technical Report, 1 July 1999-30 June 2000.

机译:新型技术的CIs型光伏器件制造:第二阶段年度技术报告,1999年7月1日至2000年6月30日。

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摘要

Thin film solar cells based on CIS-type absorbers show great promise in moving towards commercialization with photoconversion efficiencies approaching 20%. Thus far, the record laboratory efficiencies have been achieved using vacuum-based deposition techniques, the scale-up of which to large areas for high volume production presenting several challenges. Low cost particle coating methods present an interesting alternative to costly vacuum deposition techniques, offering the possibilities of compositional control, high materials utilization and inexpensive deposition over large area substrates. The R&D program at ISET is centered on development of a novel, dispersion based route to the deposition of precursor thin films that are converted to CIS-type absorbers through high temperature reactions at or close to atmospheric pressure. The goal of the current research program at ISET is to bring a non-vacuum processing route for CIS closer to commercialization by improving the device efficiency through an increase in absorber bandgap. The basic processing approach involves first synthesizing a powder containing the oxides of copper, indium and gallium.

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