Determination of Oxygen Concentration in Silicon and Germanium by Infrared Absorption

摘要

Infrared absorption measurements were made at room temperature, 80 K, and 20 K to determine the absorption coefficient of oxygen in silicon and germanium single crystals. A study was done to compare the results of four experimental methods, which involved both absolute and difference procedures. Sources of error were identified, including that due to calculating the absorption coefficient with an approximate equation which neglects multiple internal reflections. Measurements made on the same specimen at several temperatures give additional data on the relation of oxygen concentration to absorption coefficient at low temperatures. (Author)