Compound Semiconductor Heterojunction Device Technologies for High-Temperature (T > 300 deg C), Power Electronics

摘要

Recent advances in compound semiconductor materials and devices are reviewed as they relate to electronics intended for power switching and control applications at temperatures in excess of 300 deg C. The problems faced by solid-state devices operating simultaneously at high currents, voltages, and temperatures are detailed and solutions offered by the use of alternative materials such as GaAs, GaP, (Al,Ga)As, and (Al,Ga)P, and use of novel heterojunction techniques for the control of parasitics, are presented. Prototype, low-power, (Al,Ga)As/GaAs heterojunction diodes, bipolar transistors, and semiconductor controlled rectifiers are described which have demonstrated excellent electrical characteristics in the 300 to 400 deg C temperature range. These studies imply that a heterojunction, (Al,Ga)As/GaAs, power semiconductor electronics technology is feasible in the near future. (ERA citation 12:039366)