Study of K-REC with bare 60 MeV/u Kr ions channeled in a Si crystal. Experiments and simulations

摘要

K-shell Radiative Electron Capture (K-REC) measurements are presented with bare 60.1 MeV/u incident krypton ions, both in channeling conditions and for random orientation of a 37 (mu)m silicon crystal. Simulations of the K-REC photon lines have been developed. The K-REC photon peak was calculated within the non-relativistic dipole approximation, K-REC being assumed to be a purely local process. Solid state electron densities were used, and impact parameter dependent electron momentum distributions (Compton profiles) were calculated for 2s and 2p silicon electrons. (author). 31 refs.; Submitted to Physical Review, A (US). (Atomindex citation 29:006561)