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Novel Semiconductors; Final rept. 1 Mar 2005-30 Nov 2006

机译:新型半导体;最终的评论。 2005年3月1日至2006年11月30日

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The objective of this research was to develop a novel low- temperature route to the structurally controlled nanofabrication of bimetallic- oxide semiconductors, with controlled order, stoichiometry and spacing of the bimetallic centers on the atomic- and nanoscale, to deliver materials with never-before observed electronic properties resulting from the controlled electronic interactions of the two metal centers. Our approach took advantage of two recent developments: (i) a new biologically-inspired low-temperature synthesis method we recently developed, and (ii) the synthesis of defined molecular precursors of bimetallic oxides, thereby extending our synthesis method from single metal oxide materials to bimetallic oxide (and sulfide- oxide) ferroelectric and optoelectronic semiconductor materials, to obtain control over structure and enhancement of properties never before achievable. We report success in this project, with the resulting materials and technology transfer described offering the Army potential advantages for uncooled infrared detectors and fire- and explosion-proof lithium ion batteries.

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