Low Coat Solar Array Project Task Ⅰ- Silicon Material Gaseous Melt Replenishment System First Quarterly Progress Report 17 April -17 July 1979

摘要

This program was initiated in April of this year to develop a system to combine silicon formation, by hydrogen reduction of trichlorosilane, with the capability to reple¬nish a crystal growth system. The silicon formation system is based on a resistance heated quartz reaction vessel in which reduction of trichlorosilane deposits silicon on the walls of the vessel. After sufficient deposition has occured, the silicon will be melted out of the reaction vessel and carried to the crystal growth system by a heated quartz de¬livery tube. Isolation of the reaction vessel during the silicon formation stage will be accomplished by a quartz 0-tube trap-type valve containing silicon which can be melted to allow passage of molten silicon, or solidified to prevent passage of reactant gases.nCuring the quarterly reporting period, we have estimated a variety of process parameters to allow sizing and specifica¬tion of gas handling system components. Most of the major com¬ponents of the system have been designed, or specified, and ordered.